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SCT2H12NZGC11 ROHM Single

SCT2H12NZGC11 - ROHM - main product image
Part No.:SCT2H12NZGC11
Brand:ROHM
Date Code:
Stock:3,271
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 2.39
10+ $ 2.06
450+ $ 2.00

Technical Specifications

  • Part No.SCT2H12NZGC11
  • Series -
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) +22V, -6V
  • Technology SiCFET (Silicon Carbide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 900µA
  • Operating Temperature 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
  • Power Dissipation (Max) 35W (Tc)
  • Supplier Device Package TO-3PFM
  • Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
  • Drain to Source Voltage (Vdss) 1700V
  • Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
  • Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
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