ZXTN25060BFHTA DIODES BJTs

The ZXTN25060BFHTA from Diodes Inc. is a 60 V NPN medium‑power transistor in a compact SOT‑23 surface‑mount package, purpose‑built for space‑constrained switching applications where low saturation voltage and high peak current capability are essential. For selection, it delivers 3.5 A continuous collector current, a 1.25 W power dissipation rating, and an exceptionally low collector‑emitter saturation voltage of typically 175 mV at 3.5 A, minimizing conduction losses in high‑current switching circuits. The device features a 150 V collector‑emitter blocking voltage, a DC current gain of 100 at 10 mA, and a transition frequency of 185 MHz for fast switching response. Its operating junction temperature range extends from −55 °C to +150 °C, ensuring reliable performance in demanding thermal environments. In application, it excels as a lamp, relay, and solenoid driver, for general‑purpose switching in automotive and industrial systems, and in motor drive and motor control circuits where a compact footprint, low losses, and robust electrical ratings are critical. In stock at HL Electronics – request a quote for fast delivery.

ZXTN25060BFHTA - DIODES - main product image
Part No.:ZXTN25060BFHTA
Brand:DIODES
Date Code:
Stock:26,792
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.32
100+ $ 0.25
750+ $ 0.23
1500+ $ 0.21
3000+ $ 0.21
18000+ $ 0.20
39000+ $ 0.20

Technical Specifications

  • Part No.ZXTN25060BFHTA
  • Ratings AEC-Q101
  • Category Discrete Semiconductor Products > Transistors > BJTs
  • Ic (Max) 3.5 A
  • Packaging Tape & Reel (TR)
  • Vceo (Max) 60 V
  • Part Status Active
  • Power - Max 1.25 W
  • Manufacturer Diodes Incorporated
  • Mounting Type Surface Mount
  • Transistor Type NPN
  • Base Product Number ZXTN25060BFH
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Frequency - Transition 185MHz
  • Supplier Device Package SOT-23-3
  • Vce Saturation (Max) @ Ib, Ic 175mV @ 350mA, 3.5A
  • Current - Collector Cutoff (Max) 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 2V
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