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ZXMP6A17GQTA DIODES Power MOSFET
The ZXMP6A17GQTA is a 60V P-Channel enhancement-mode MOSFET in a SOT-223 package, ideal for high-side switching and load management where a compact, logic-level gate drive is essential. Select this device when your design demands a P-FET with 125mΩ Rds(on) at 10Vgs, 3A continuous drain current, and a low 1V max threshold voltage for direct 3.3V/5V MCU drive capability. Its 17.7nC gate charge enables efficient high-frequency switching. Key applications include load switches, power distribution, DC-DC converters, and battery protection circuits. It also excels in industrial automation, automotive body electronics, and motor control, with a -55°C to +150°C junction range ensuring reliability in harsh environments. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.33 |
| 50+ | $ 0.25 |
| 1000+ | $ 0.23 |
| 20000+ | $ 0.23 |
| 30000+ | $ 0.23 |
Technical Specifications
- Part No.ZXMP6A17GQTA
- Category Discrete Semiconductor Products
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 637pF @ 30V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2W (Ta)
- Rds On (Max) @ Id, Vgs 125 mOhm @ 2.2A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223