ZVP4525E6TA DIODES Power MOSFET

The ZVP4525E6TA from Diodes Incorporated is a 250V P-channel enhancement-mode MOSFET designed for high-voltage, low-current switching. For selection, its key advantage is the 250V drain-source breakdown voltage, combined with a logic-level gate threshold of just 2V, enabling direct drive from 3.3V or 5V microcontrollers without level shifters. The 197mA continuous drain current and 14Ω on-resistance suit low-power high-voltage circuits. Ultra-low gate charge of 3.45nC and input capacitance of 73pF enable fast switching with minimal drive requirements. The ±40V gate-source voltage tolerance provides exceptional robustness against voltage spikes. In application, it excels as a high-side load switch in telecom power supplies, level shifter in industrial controls, and relay replacement in smart meters. Its P-channel nature simplifies high-side drive circuitry, while the compact SOT-23-6 package and 150°C junction temperature make it ideal for space-constrained, high-reliability designs such as battery management systems, sensor interface circuits, and medical instrumentation. In stock at HL Electronics – request a quote for fast delivery.