ZTX558 DIODES Single

The ZTX558 from Diodes Inc. is a PNP silicon planar medium‑power high‑voltage bipolar transistor in an E‑Line (TO‑92 compatible) through‑hole package. For selection, key specifications include a VCEO of –400 V and a continuous collector current of –200 mA, making it suitable for circuits requiring high voltage blocking at low current. The DC current gain has a minimum of 100, while the transition frequency reaches 50 MHz for fast switching or wideband amplification. The maximum collector‑emitter saturation voltage is 500 mV, the power dissipation is rated at 1 W, and the operating junction temperature ranges from –55 °C to 200 °C. In application, it excels in high‑voltage current sources, industrial power supplies, telecommunications line cards, and telephone ring generators. It is also deployed in audio preamplifiers, low‑power switching and relay drivers, and high‑reliability systems in automotive and industrial sectors where a compact through‑hole device with robust high‑voltage performance is required. In stock at HL Electronics – request a quote for fast delivery.