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STP4NK80ZFP - ST
The STP4NK80ZFP from STMicroelectronics is an 800V, 3A N-Channel SuperMESH™ power MOSFET housed in a fully insulated TO-220FP through-hole package, designed for high-voltage switching with reinforced safety and simplified thermal management . Its Zener-protected gate structure absorbs transient voltage spikes, enhancing ESD robustness without external protection. Developed through extreme optimization of ST's PowerMESH layout, the device delivers a very good dv/dt capability for the most demanding applications while minimizing gate charge and intrinsic capacitances . Key switching characteristics include a 13ns turn-on delay and 32ns fall time, making it suitable for high-frequency operation . Fully avalanche tested and rated for -55°C to +150°C junction temperature, it is ideal for offline switch-mode power supplies, electronic lighting ballasts, motor drives, and renewable energy inverters where long-term reliability is critical. In stock at HL Electronics – request a quote for fast delivery.
Partno：STP4NK80ZFPEncapsulation：
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- PartNoSTP4NK80ZFP
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 25W (Tc)
- Rds On (Max) @ Id, Vgs 3.5 Ohm @ 1.5A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP