STD4NK80ZT4 - ST

The STD4NK80ZT4 is an 800V N-Channel SuperMESH™ power MOSFET in a DPAK package, ideal for high-voltage switching applications where space is at a premium. Select this device when your design demands robust 800V breakdown voltage, 3A continuous drain current, and 3.5Ω on-resistance, all in a surface-mount footprint. Its extremely high dv/dt capability and 100% avalanche testing ensure reliability in demanding circuits. With low gate charge (22.5nC) and input capacitance (575pF), it minimizes switching losses. This MOSFET excels in AC-DC switching power supplies, PFC circuits, high-voltage lighting drivers, and motor drives. It also suits solar inverters, battery chargers, and industrial control systems where efficient power management is essential. In stock at HL Electronics – request a quote for fast delivery.

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Partno:STD4NK80ZT4Encapsulation:

Brand:STParticular Year:

Classification:Packing:

Stock:73000SPQ:0

MOQ:1+Delivery Time:In Stock

Unit Price: $ 0.448837
Total: $ 0.45
Order Quantity: - + Get Sample / Inquiry →
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  • PartNoSTD4NK80ZT4
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series SuperMESH™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 800V
  • Current - Continuous Drain (Id) @ 25°C 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
  • Vgs (Max) ±30V
  • FET Feature -
  • Power Dissipation (Max) 80W (Tc)
  • Rds On (Max) @ Id, Vgs 3.5 Ohm @ 1.5A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package D-Pak
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