> Goods Details Page
> SISS27DN-T1-GE3
SISS27DN-T1-GE3 - VISHAY
Partno：SISS27DN-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.460927
Total：
$ 0.46
Other Platform Purchase Links： No Data
- PartNoSISS27DN-T1-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 15V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs 5.6 mOhm @ 15A, 10V
- Operating Temperature -50°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)