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SIR626DP-T1-RE3 - VISHAY
Partno：SIR626DP-T1-RE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：19338SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.888606
Total：
$ 0.89
Other Platform Purchase Links： No Data
- PartNoSIR626DP-T1-RE3
- Category Discrete Semiconductor Products
- Series TrenchFET® Gen IV
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 78nC @ 7.5V
- Input Capacitance (Ciss) (Max) @ Vds 5130pF @ 30V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 104W (Tc)
- Rds On (Max) @ Id, Vgs 1.7 mOhm @ 20A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® SO-8