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SIR182DP-T1-RE3 - VISHAY
Partno：SIR182DP-T1-RE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.606005
Total：
$ 0.61
Other Platform Purchase Links： No Data
- PartNoSIR182DP-T1-RE3
- Category Discrete Semiconductor Products
- Series TrenchFET® Gen IV
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs(th) (Max) @ Id 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 30V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 69.4W (Tc)
- Rds On (Max) @ Id, Vgs 2.8 mOhm @ 15A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® SO-8