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SIHP22N60E-GE3 - VISHAY
Partno：SIHP22N60E-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.12587
Total：
$ 1.13
Other Platform Purchase Links： No Data
- PartNoSIHP22N60E-GE3
- Category Discrete Semiconductor Products
- Series E
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 227W (Tc)
- Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole