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SIHG30N60E-GE3 - VISHAY
Partno：SIHG30N60E-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：9491SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.549016
Total：
$ 1.55
Other Platform Purchase Links： No Data
- PartNoSIHG30N60E-GE3
- Category Discrete Semiconductor Products
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Rds On (Max) @ Id, Vgs 125 mOhm @ 15A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247A°C