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SIHD2N80E-GE3 - VISHAY
Partno：SIHD2N80E-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.630185
Total：
$ 0.63
Other Platform Purchase Links： No Data
- PartNoSIHD2N80E-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series E
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 62.5W (Tc)
- Rds On (Max) @ Id, Vgs 2.75 Ohm @ 1A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D-PAK (TO-252AA)