> Goods Details Page
> SIA414DJ-T1-GE3
SIA414DJ-T1-GE3 - VISHAY
Partno：SIA414DJ-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：14631SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.435236
Total：
$ 0.44
Other Platform Purchase Links： No Data
- PartNoSIA414DJ-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 8V
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Vgs(th) (Max) @ Id 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 4V
- Vgs (Max) ±5V
- FET Feature -
- Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs 11 mOhm @ 9.7A, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® SC-70-6 Single