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SI8499DB-T2-E1 - VISHAY
Partno：SI8499DB-T2-E1Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.259932
Total：
$ 0.26
Other Platform Purchase Links： No Data
- PartNoSI8499DB-T2-E1
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs(th) (Max) @ Id 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 30nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
- Vgs (Max) ±12V
- FET Feature -
- Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs 32 mOhm @ 1.5A, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 6-Micro Foot™