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SI7852DP-T1-GE3 - VISHAY
Partno：SI7852DP-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：6869SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.255836
Total：
$ 1.26
Other Platform Purchase Links： No Data
- PartNoSI7852DP-T1-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds -
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 1.9W (Ta)
- Rds On (Max) @ Id, Vgs 16.5 mOhm @ 10A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® SO-8