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SI7113ADN-T1-GE3 - VISHAY
Partno：SI7113ADN-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：16761SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.315848
Total：
$ 0.32
Other Platform Purchase Links： No Data
- PartNoSI7113ADN-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 515pF @ 50V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 27.8W (Tc)
- Rds On (Max) @ Id, Vgs 132 mOhm @ 3.8A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® 1212-8