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SI4403CDY-T1-GE3 - VISHAY
The SI4403CDY-T1-GE3 from Vishay Siliconix is a 20V P-Channel TrenchFET® power MOSFET in a compact SO-8 surface-mount package, delivering a low 15.5mΩ RDS(on) at 4.5Vgs for efficient load switching and power management. Its 1V max Vgs(th) threshold enables direct 1.8V logic-level drive from microcontrollers or PMICs, making it ideal for battery-operated devices where minimal voltage overhead is critical. With 13.4A continuous drain current and 90nC gate charge, it excels in DC-DC converters, USB power distribution, battery charging circuits, and reverse polarity protection. TrenchFET® technology reduces conduction losses and improves thermal performance in ultrabooks, tablets, smartphones, and IoT endpoints. The device is 100% Rg and UIS tested, RoHS-compliant, halogen-free per IEC 61249-2-21, and supplied in tape & reel for automated assembly. Operating from -55°C to +150°C, it provides a reliable solution for space-constrained designs requiring low-voltage, high-efficiency P-Channel switching. In stock at HL Electronics – request a quote for fast delivery.
Partno：SI4403CDY-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：23000SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoSI4403CDY-T1-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 13.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 90nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 10V
- Vgs (Max) ±8V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs 15.5 mOhm @ 9A, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-SO