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SI3430DV-T1-GE3 - VISHAY
Partno：SI3430DV-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：9906SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.294691
Total：
$ 0.29
Other Platform Purchase Links： No Data
- PartNoSI3430DV-T1-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds -
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 1.14W (Ta)
- Rds On (Max) @ Id, Vgs 170 mOhm @ 2.4A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 6-TSOP