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SI3421DV-T1-GE3 - VISHAY
Partno：SI3421DV-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：4692SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.225174
Total：
$ 0.23
Other Platform Purchase Links： No Data
- PartNoSI3421DV-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2580pF @ 15V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
- Rds On (Max) @ Id, Vgs 19.2 mOhm @ 7A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 6-TSOP