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SI2325DS-T1-GE3 - VISHAY
Partno：SI2325DS-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3015SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.329449
Total：
$ 0.33
Other Platform Purchase Links： No Data
- PartNoSI2325DS-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 150V
- Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 750mW (Ta)
- Rds On (Max) @ Id, Vgs 1.2 Ohm @ 500mA, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3 (TO-236)