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SI2319DS-T1-E3 - VISHAY
Partno：SI2319DS-T1-E3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.346073
Total：
$ 0.35
Other Platform Purchase Links： No Data
- PartNoSI2319DS-T1-E3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 470pF @ 20V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 750mW (Ta)
- Rds On (Max) @ Id, Vgs 82 mOhm @ 3A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3 (TO-236)