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SI1401EDH-T1-GE3 - VISHAY
Partno：SI1401EDH-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.264466
Total：
$ 0.26
Other Platform Purchase Links： No Data
- PartNoSI1401EDH-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 12V
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds -
- Vgs (Max) ±10V
- FET Feature -
- Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
- Rds On (Max) @ Id, Vgs 34 mOhm @ 5.5A, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SC-70-6 (SOT-363)