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SI1013R-T1-GE3 - VISHAY
Partno：SI1013R-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.240286
Total：
$ 0.24
Other Platform Purchase Links： No Data
- PartNoSI1013R-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds -
- Vgs (Max) ±6V
- FET Feature -
- Power Dissipation (Max) 150mW (Ta)
- Rds On (Max) @ Id, Vgs 1.2 Ohm @ 350mA, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SC-75A