SBR1U200P1Q-7 DIODES Single
For high-efficiency rectification in compact designs, the SBR1U200P1Q-7 stands out with its Super Barrier technology, optimized for fast switching. To select it, confirm your circuit’s peak reverse voltage does not exceed 200V and the average forward current stays within 1A. Its key advantage is the ultra-low forward voltage drop of just 820mV at 1A combined with a 25ns fast recovery time, minimizing power loss. This makes it ideal for high-frequency DC-DC converters, secondary-side rectification in power supplies, and reverse polarity protection in portable devices. The wide -65°C to 175°C junction temperature range and the space-saving PowerDI™ 123 package suit thermally demanding, densely packed industrial and consumer electronics. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.17 |
| 750+ | $ 0.15 |
| 1500+ | $ 0.15 |
| 3000+ | $ 0.14 |
| 18000+ | $ 0.14 |
| 39000+ | $ 0.14 |
Technical Specifications
- Part No.SBR1U200P1Q-7
- Speed Fast Recovery =< 500ns, >200mA (Io)
- Series -
- Category Discrete Semiconductor Products > Diodes > Rectifiers > Single
- Packaging Tape & Reel (TR)
- Diode Type Super Barrier
- Part Status Active
- Mounting Type Surface Mount
- Capacitance @ Vr, F -
- Supplier Device Package PowerDI™ 123
- Reverse Recovery Time (trr) 25ns
- Current - Reverse Leakage @ Vr 500µA @ 200V
- Voltage - DC Reverse (Vr) (Max) 200V
- Current - Average Rectified (Io) 1A
- Operating Temperature - Junction -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If 820mV @ 1A
