NSS60601MZ4T1G ON Single
The NSS60601MZ4T1G from onsemi is a high-current NPN bipolar transistor designed for efficient power switching with low voltage drop. For selection, its key advantages are a 6A continuous collector current and an ultra-low saturation voltage of just 300mV at 6A, which minimizes conduction losses and heat generation. The 60V collector-emitter breakdown voltage suits medium-voltage applications, while a high minimum DC current gain of 120 at 1A ensures easy drive from low-power sources. Its 100MHz transition frequency supports high-speed switching designs, and 800mW power dissipation in the SOT-223 package enables compact surface-mount layouts. In application, it excels as a load switch in power management circuits, LED driver for high-brightness lighting, and relay/solenoid driver in industrial controls. It is also ideal for DC-DC converter switching, battery charger circuits in portable devices, and motor control in small automation equipment where high current, low voltage drop, and SMT assembly are essential. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.32 |
| 50+ | $ 0.24 |
| 1000+ | $ 0.23 |
| 20000+ | $ 0.22 |
| 30000+ | $ 0.22 |
Technical Specifications
- Part No.NSS60601MZ4T1G
- Series -
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single
- Packaging Tape & Reel (TR)
- Part Status Active
- Power - Max 800mW
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature -55°C ~ 150°C (TJ)
- Frequency - Transition 100MHz
- Supplier Device Package SOT-223
- Vce Saturation (Max) @ Ib, Ic 300mV @ 600mA, 6A
- Current - Collector (Ic) (Max) 6A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V
- Voltage - Collector Emitter Breakdown (Max) 60V
