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IRFP064PBF - VISHAY
The IRFP064PBF is a 60V N-Channel MOSFET in a TO-247 package, ideal for high-power switching applications requiring robust through-hole mounting and excellent thermal performance. Select this device when your design demands 70A continuous drain current and ultra-low 9mΩ Rds(on) for minimal conduction losses. Its 300W power dissipation and 190nC gate charge suit both DC and low-frequency switching. Key applications include high-current DC motor drives, industrial power supplies, battery chargers, and welding equipment. It also excels in uninterruptible power supplies (UPS) and solar inverter DC-DC stages. The -55°C to +175°C junction range ensures reliability in harsh environments. Use it where TO-247's easy heatsinking and proven ruggedness outperform surface-mount alternatives. In stock at HL Electronics – request a quote for fast delivery.
Partno：IRFP064PBFEncapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：17100SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoIRFP064PBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Rds On (Max) @ Id, Vgs 9 mOhm @ 78A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3