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IRF830APBF - VISHAY
The IRF830APBF is a 500V N-Channel HEXFET power MOSFET in TO-220AB, ideal for high-voltage switching in SMPS and UPS systems . Select this device when your design requires 5A continuous drain current and 1.4Ω max on-resistance at 10V gate drive . Its 24nC low gate charge and 620pF input capacitance simplify gate drive requirements . It excels in Switch Mode Power Supplies, Uninterruptible Power Supplies, and high-speed power switching circuits . Additional applications include half-bridge/full-bridge converters, active PFC circuits, and industrial motor drives . The -55°C to +150°C junction range ensures reliability in harsh thermal environments . In stock at HL Electronics – request a quote for fast delivery.
Partno：IRF830APBFEncapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：23000SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoIRF830APBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 74W (Tc)
- Rds On (Max) @ Id, Vgs 1.4 Ohm @ 3A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB