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IRF7480MTRPBF - Infineon
The IRF7480MTRPBF from Infineon Technologies is a 40V N-Channel HEXFET® power MOSFET housed in a surface-mount DirectFET™ ME package, delivering an ultra-low 1.5mΩ RDS(on) for minimal conduction losses in high-current applications. Capable of handling 217A continuous drain current, it is engineered for demanding power conversion where efficiency and thermal performance are critical. The DirectFET™ package features a low-profile design with dual-sided cooling, enabling superior heat dissipation compact form factor compared to traditional wire-bonded solutions. This makes it ideal for high-density DC-DC converters, voltage regulator modules, point-of-load converters, and server power supplies. Fully avalanche rated and RoHS compliant, the device operates from -55°C to +150°C. Its fast switching characteristics combined with Infineon's proven HEXFET® technology ensure reliable performance in telecom infrastructure, networking equipment, and industrial power systems where board space premium low conduction losses are essential. In stock at HL Electronics – request a quote for fast delivery.
Partno：IRF7480MTRPBFEncapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：19200SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoIRF7480MTRPBF
- Category Discrete Semiconductor Products
- Series HEXFET®, StrongIRFET™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 217A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 6680pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 96W (Tc)
- Rds On (Max) @ Id, Vgs 1.2 mOhm @ 132A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DirectFET™ Isometric ME