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IRF610PBF - VISHAY
Choose this 200V, 3.3A N-Channel MOSFET when your design requires a proven, widely-available high-voltage switch in a through-hole TO-220AB package. Its low gate charge of 8.2nC and 140pF input capacitance enable fast, efficient switching at moderate frequencies. Best suited for off-line SMPS start-up circuits, electronic ballasts, DC-DC converters, motor drives, and relay replacement in industrial controls. The 1.5Ω RDS(on) fits applications where conduction losses are secondary to voltage rating and ruggedness. Fully avalanche rated with 36W power dissipation capability, it handles demanding line-voltage environments reliably. In stock at HL Electronics – request a quote for fast delivery.
Partno：IRF610PBFEncapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：16690SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoIRF610PBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 36W (Tc)
- Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB