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IRF3710PBF - Infineon
The IRF3710PBF is a 100V N-Channel HEXFET® power MOSFET in a TO-220AB package, ideal for high-efficiency, high-current switching applications. Select this device when your design demands low 23mΩ on-resistance, 57A continuous drain current, and fast switching capability. It excels in DC-DC converters, solar inverters, motor drives, uninterruptible power supplies (UPS), and power tools. The device is also suitable for automotive and industrial automation applications where 200W power dissipation and a wide -55°C to +175°C operating temperature range are essential . In stock at HL Electronics – request a quote for fast delivery.
Partno：IRF3710PBFEncapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：158380SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoIRF3710PBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 200W (Tc)
- Rds On (Max) @ Id, Vgs 23 mOhm @ 28A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB