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FQD2N100TM ON Power MOSFET

FQD2N100TM - ON - main product image
Part No.:FQD2N100TM
Brand:ON
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.46
100+ $ 0.39
1250+ $ 0.35
2500+ $ 0.34
37500+ $ 0.34
50000+ $ 0.33

Technical Specifications

  • Part No.FQD2N100TM
  • Category Discrete Semiconductor Products
  • Series QFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 1000V
  • Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
  • Vgs (Max) ±30V
  • FET Feature -
  • Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs 9 Ohm @ 800mA, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package D-Pak
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