home icon > Goods Details Page > FQD19N10LTM

FQD19N10LTM ON Power MOSFET

FQD19N10LTM - ON - main product image
Part No.:FQD19N10LTM
Brand:ON
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.58
100+ $ 0.48
1250+ $ 0.44
2500+ $ 0.42
37500+ $ 0.42
50000+ $ 0.41

Technical Specifications

  • Part No.FQD19N10LTM
  • Category Discrete Semiconductor Products
  • Series QFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs 100 mOhm @ 7.8A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package D-Pak
📧 📋 💬