DXT5551P5-13 DIODES Single

Select the DXT5551P5-13 NPN BJT when you need a high-voltage, general-purpose transistor in a small footprint. Verify your collector-emitter voltage does not exceed 160V and collector current stays within 600mA. Its key selection criteria include a 130MHz transition frequency for medium-speed switching and a low 200mV saturation voltage at 50mA, which minimizes power loss. Typical applications include high-voltage inverter drives, power supply startup circuits, telecom line cards, and LED lighting ballasts. It also serves excellently as a high-voltage buffer or level shifter for driving relays and solenoids in industrial control panels. The PowerDI™ 5 surface-mount package combines a space-saving design with 2.25W power dissipation, suiting densely packed, thermally-demanding designs across its -55°C to 150°C operating range. In stock at HL Electronics – request a quote for fast delivery.

DXT5551P5-13 - DIODES - main product image
Part No.:DXT5551P5-13
Brand:DIODES
Date Code:
Stock:36,165
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.21
100+ $ 0.16
1250+ $ 0.15
2500+ $ 0.14
5000+ $ 0.13
30000+ $ 0.13
65000+ $ 0.13

Technical Specifications

  • Part No.DXT5551P5-13
  • Series -
  • Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Power - Max 2.25W
  • Mounting Type Surface Mount
  • Transistor Type NPN
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Frequency - Transition 130MHz
  • Supplier Device Package PowerDI™ 5
  • Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
  • Current - Collector (Ic) (Max) 600mA
  • Current - Collector Cutoff (Max) 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max) 160V
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