DXT5551P5-13 DIODES Single
Select the DXT5551P5-13 NPN BJT when you need a high-voltage, general-purpose transistor in a small footprint. Verify your collector-emitter voltage does not exceed 160V and collector current stays within 600mA. Its key selection criteria include a 130MHz transition frequency for medium-speed switching and a low 200mV saturation voltage at 50mA, which minimizes power loss. Typical applications include high-voltage inverter drives, power supply startup circuits, telecom line cards, and LED lighting ballasts. It also serves excellently as a high-voltage buffer or level shifter for driving relays and solenoids in industrial control panels. The PowerDI™ 5 surface-mount package combines a space-saving design with 2.25W power dissipation, suiting densely packed, thermally-demanding designs across its -55°C to 150°C operating range. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.16 |
| 1250+ | $ 0.15 |
| 2500+ | $ 0.14 |
| 5000+ | $ 0.13 |
| 30000+ | $ 0.13 |
| 65000+ | $ 0.13 |
Technical Specifications
- Part No.DXT5551P5-13
- Series -
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single
- Packaging Tape & Reel (TR)
- Part Status Active
- Power - Max 2.25W
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature -55°C ~ 150°C (TJ)
- Frequency - Transition 130MHz
- Supplier Device Package PowerDI™ 5
- Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
- Current - Collector (Ic) (Max) 600mA
- Current - Collector Cutoff (Max) 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max) 160V
