DMT3006LFDF-7 DIODES Power MOSFET
The DMT3006LFDF-7 is a 30V N-Channel MOSFET in a compact U-DFN2020-6 package, AEC-Q101 qualified for automotive and high-reliability applications. Select this device when your design demands ultra-low 7mΩ Rds(on) and 14.1A continuous drain current with minimal board space. Its 22.6nC gate charge and 1320pF input capacitance enable efficient high-frequency switching. Key applications include automotive body electronics, DC-DC converters, load switching, and battery protection circuits in portable devices. It also excels in motor drives for drones and power tools, power management in IoT devices, and synchronous rectification. The -55°C to +150°C junction range ensures reliability in harsh environments, while the low-profile DFN package suits space-constrained designs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.25 |
| 100+ | $ 0.20 |
| 750+ | $ 0.18 |
| 1500+ | $ 0.17 |
| 3000+ | $ 0.16 |
| 18000+ | $ 0.16 |
| 39000+ | $ 0.16 |
Technical Specifications
- Part No.DMT3006LFDF-7
- Series Automotive, AEC-Q101
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 7 mOhm @ 9A, 10V
- Power Dissipation (Max) 800mW (Ta)
- Supplier Device Package U-DFN2020-6 (Type F)
- Gate Charge (Qg) (Max) @ Vgs 22.6nC @ 10V
- Drain to Source Voltage (Vdss) 30V
- Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 15V
- Current - Continuous Drain (Id) @ 25°C 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 3.7V, 10V
