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DMN10H099SK3-13 DIODES Power MOSFET

DMN10H099SK3-13 - DIODES - main product image
Part No.:DMN10H099SK3-13
Brand:DIODES
Date Code:
Stock:7,091
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.28
100+ $ 0.22
1250+ $ 0.19
2500+ $ 0.18

Technical Specifications

  • Part No.DMN10H099SK3-13
  • Category Discrete Semiconductor Products
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25u00b0C 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Vgs(th) (Max) @ Id 3V @ 250u00b5A
  • Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V
  • Vgs (Max) u00b120V
  • FET Feature -
  • Power Dissipation (Max) 34W (Tc)
  • Rds On (Max) @ Id, Vgs 80 mOhm @ 3.3A, 10V
  • Operating Temperature -55u00b0C ~ 150u00b0C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package TO-252
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