DMN1019UFDE-7 DIODES Power MOSFET

The DMN1019UFDE-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage power management. For selection, its ultra-low RDS(on) of just 10mΩ at 4.5V minimizes conduction losses, while an 800mV maximum threshold voltage enables direct drive from 1.2V logic and single-cell batteries. The 11A drain current rating and 12V breakdown voltage suit compact, high-efficiency designs. Its low gate charge (50.6nC) reduces switching losses in high-frequency operation. In application, it excels as a load switch in smartphones, tablets, and portable media players. Its low on-resistance also makes it ideal for battery protection circuits, DC-DC converter low-side switches, and motor control in IoT devices and wearables. The tiny U-DFN2020-6 package saves critical board space in space-constrained applications like wireless earbuds and smart sensors. In stock at HL Electronics – request a quote for fast delivery.